2SD1207T-AE
TRANS NPN 50V 2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1207T-AE is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a 50V collector-emitter breakdown voltage (Vceo) and a continuous collector current capability of up to 2A. It features a transition frequency of 150MHz and a maximum power dissipation of 1W. The DC current gain (hFE) is specified as a minimum of 100 at 100mA collector current and 2V Vce. The saturation voltage (Vce(sat)) is a maximum of 400mV at 50mA base current and 1A collector current. The device is supplied in a TO-92 (TO-226) package, suitable for through-hole mounting. Typical applications include power supply circuits, audio amplifiers, and switching regulators. The 2SD1207T-AE is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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