2SD1207T
TRANS NPN 50V 2A 3MPManufacturer: onsemi
Categories: Single Bipolar Transistors
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This onsemi NPN Bipolar Junction Transistor (BJT), part number 2SD1207T, is designed for applications requiring robust switching and amplification. It features a 50V collector-emitter breakdown voltage and a maximum collector current of 2A, making it suitable for power supply regulation, motor control, and general-purpose switching in industrial and consumer electronics. The device exhibits a minimum DC current gain (hFE) of 200 at 100mA and 2V, with a transition frequency of 150MHz. Its maximum power dissipation is rated at 1W, and it operates at junction temperatures up to 150°C. The 2SD1207T is provided in a 3-MP package (TO-226-3, TO-92-3 Long Body) for through-hole mounting. Key parameters include a Vce(sat) of 400mV at 50mA/1A and a low collector cutoff current of 100nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | 3-MP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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