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2SD1207S-AE

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2SD1207S-AE

TRANS NPN 50V 2A 3MP

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 2SD1207S-AE is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a 50V collector-emitter breakdown voltage and a continuous collector current capability of 2A, making it suitable for power switching and amplification tasks. Its transition frequency of 150MHz allows for operation in moderate frequency ranges. The device offers a minimum DC current gain (hFE) of 100 at 100mA and 2V, with a maximum Vce(sat) of 400mV at 50mA and 1A. Dissipating up to 1W of power, it is housed in a 3-MP (TO-226-3, TO-92-3 Long Body) package, available on tape and reel. This transistor finds application in industrial automation, consumer electronics, and power management circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 2V
Frequency - Transition150MHz
Supplier Device Package3-MP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max1 W

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