2SD1145G-AE
BIP NPN 5A 20VManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
Bipolar (BJT) Transistor NPN 20 V 5 A 120MHz 900 mW Through Hole 3-MP
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | 3-MP |
| Grade | - |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 900 mW |
| Qualification | - |
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