2SD1060S-1EX
TRANS NPN 50V 5A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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This onsemi NPN bipolar junction transistor, part number 2SD1060S-1EX, offers robust performance for demanding applications. It features a 50V collector-emitter breakdown voltage and a maximum collector current of 5A, with a saturation voltage of 300mV at 3A. The device exhibits a minimum DC current gain (hFE) of 140 at 1A, 2V, and a transition frequency of 30MHz. Dissipating up to 1.75W, this transistor is housed in a standard TO-220-3 package suitable for through-hole mounting. Typical applications span industrial automation, power management, and general-purpose amplification where reliable switching and current handling are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 1A, 2V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1.75 W |