2SD1060R-1EX
TRANS NPN 50V 5A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2SD1060R-1EX is an NPN bipolar junction transistor designed for robust performance. This through-hole component, housed in a TO-220-3 package, offers a maximum collector current (Ic) of 5A and a collector-emitter breakdown voltage (Vce(max)) of 50V. Featuring a transition frequency (fT) of 30MHz and a maximum power dissipation of 1.75W, it achieves a minimum DC current gain (hFE) of 100 at 1A and 2V. The saturation voltage (Vce(sat)) is specified at a maximum of 300mV with an Ic of 3A and Ib of 300mA. Its collector cutoff current (Icbo) is rated at 100µA. This device is suitable for applications in automotive and industrial power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 2V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1.75 W |
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