2SD1060R-1E
TRANS NPN 50V 5A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1060R-1E is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 5A, with a saturation voltage of 300mV at 3A. It offers a minimum DC current gain (hFE) of 100 at 1A and 2V, and a transition frequency of 30MHz. The 2SD1060R-1E is supplied in a TO-220-3 through-hole package, capable of dissipating up to 1.75W and operating at junction temperatures up to 150°C. Its robust specifications make it suitable for use in power control, voltage regulation, and switching circuits within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 2V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1.75 W |