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2SD1047P-E

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2SD1047P-E

TRANS NPN 140V 12A TO3PB

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi 2SD1047P-E is a high-power NPN bipolar junction transistor (BJT) designed for robust performance. This component features a maximum collector-emitter breakdown voltage of 140 V and a continuous collector current capability of 12 A. With a power dissipation rating of 120 W, it is suitable for demanding applications. The transistor exhibits a minimum DC current gain (hFE) of 100 at 1 A and 5 V, and a transition frequency of 15 MHz. The saturation voltage (Vce(sat)) is specified at a maximum of 2.5 V for a collector current of 5 A driven by 500 mA of base current. Packaged in a TO-3PB (TO-3P-3, SC-65-3) through-hole package, this device is commonly employed in power supply regulation, audio amplifiers, and general-purpose switching applications across various industrial sectors.

Additional Information

Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic2.5V @ 500mA, 5A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 5V
Frequency - Transition15MHz
Supplier Device PackageTO-3PB
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)140 V
Power - Max120 W

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