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2SD1012G-SPA-AC

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2SD1012G-SPA-AC

TRANS NPN 15V 0.7A 3SPA

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi NPN Bipolar Junction Transistor, part number 2SD1012G-SPA-AC. This through-hole component features a 15V collector-emitter breakdown voltage and a maximum collector current of 700 mA. It offers a minimum DC current gain (hFE) of 280 at 50mA and 2V, with a transition frequency of 250MHz. The device dissipates a maximum of 250 mW and operates up to a junction temperature of 125°C. Saturation voltage (Vce Sat) is specified at 80mV maximum for an operating point of 10mA base current and 100mA collector current. The collector cutoff current (ICBO) is 1µA. This component is supplied in a 3-SPA package, available on tape and reel (TR). It finds application in general-purpose amplification and switching circuits across various industrial and consumer electronics segments.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SIP
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature125°C (TJ)
Vce Saturation (Max) @ Ib, Ic80mV @ 10mA, 100mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce280 @ 50mA, 2V
Frequency - Transition250MHz
Supplier Device Package3-SPA
Current - Collector (Ic) (Max)700 mA
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max250 mW

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