2SD1012G-SPA
TRANS NPN 15V 0.7A 3SPAManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SD1012G-SPA is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a collector-emitter breakdown voltage of 15V and a maximum collector current of 700mA. The transistor exhibits a minimum DC current gain (hFE) of 280 at 50mA collector current and 2V collector-emitter voltage. With a transition frequency of 250MHz and a maximum power dissipation of 250mW, it is suitable for applications requiring moderate switching and amplification capabilities. The device operates within a junction temperature range of -55°C to 125°C. Packaged in a 3-SPA (3-SIP) through-hole configuration, this transistor is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 50mA, 2V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | 3-SPA |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 250 mW |
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