2SC6099-TL-E
TRANS NPN 100V 2A TPFAManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number 2SC6099-TL-E. This transistor offers a collector-emitter breakdown voltage of 100V and a continuous collector current of up to 2A. It features a transition frequency of 300MHz and a maximum power dissipation of 800mW. The device is designed for surface mount applications and is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, also known as TP-FA. Key specifications include a saturation voltage of 165mV at 100mA collector current and 1A collector current, and a minimum DC current gain (hFE) of 300 @ 100mA, 5V. The leakage current (ICBO) is rated at 1µA (Max). Operating temperature range extends to 150°C (TJ). This component is typically utilized in power switching and amplification circuits across various industrial and consumer electronics applications. It is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 165mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 800 mW |
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