2SC6099-E
TRANS NPN 100V 2A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number 2SC6099-E. This component offers a collector-emitter breakdown voltage of 100V and a maximum collector current of 2A. Featuring a transition frequency of 300MHz and a maximum power dissipation of 800mW, it is designed for through-hole mounting in a TO-251-3 Short Leads, IPAK, TO-251AA package. The transistor exhibits a minimum DC current gain (hFE) of 300 at 100mA and 5V, with a Vce saturation of 165mV at 100mA and 1A. The collector cutoff current is specified at 1µA (ICBO), and the operating junction temperature can reach up to 150°C. This device is commonly utilized in industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 165mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 800 mW |
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