2SC6097-E
TRANS NPN 60V 3A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC6097-E is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a collector current (Ic) capability of up to 3A and a collector-emitter breakdown voltage (Vce) of 60V. With a transition frequency (fT) of 390MHz and a maximum power dissipation of 800mW, the 2SC6097-E offers robust performance. It exhibits a minimum DC current gain (hFE) of 300 at 100mA and 2V, with a saturation voltage (Vce(sat)) of 135mV at 100mA and 1A. The device is supplied in a TP package, commonly known as TO-251-3 Short Leads or IPAK. Typical applications include power management, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 135mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Frequency - Transition | 390MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |