2SC6096-TD-H
TRANS NPN 100V 2A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC6096-TD-H is a bipolar junction transistor featuring an NPN configuration. This device offers a collector-emitter breakdown voltage of 100V and can handle a continuous collector current of up to 2A. The transistor exhibits a transition frequency of 300MHz and a maximum power dissipation of 1.3W. With a collector-emitter saturation voltage of 150mV at 100mA collector current and 10A base current, and a minimum DC current gain (hFE) of 300 at 100mA collector current and 5V collector-emitter voltage, this component is suitable for applications requiring robust switching and amplification. The 2SC6096-TD-H is supplied in a PCP (TO-243AA) surface mount package and is delivered on tape and reel. This component finds application in power management and general-purpose amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.3 W |
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