2SC6095-TD-E
TRANS NPN 80V 2.5A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2SC6095-TD-E is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 80V and can handle a continuous collector current of up to 2.5A, with a maximum power dissipation of 1.3W. The transistor exhibits a transition frequency of 350MHz, making it suitable for various signal amplification and switching tasks. Key specifications include a saturation voltage of 150mV at 50mA collector current and 1A collector current, and a minimum DC current gain (hFE) of 300 at 100mA collector current and 5V collector-emitter voltage. The 2SC6095-TD-E is housed in a TO-243AA (PCP) package and supplied on tape and reel for automated surface mount assembly. This device finds application in power management, industrial control, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 5V |
| Frequency - Transition | 350MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 2.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.3 W |
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