2SC6094-TD-E
TRANS NPN 60V 3A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC6094-TD-E is an NPN bipolar junction transistor (BJT) designed for efficient switching and amplification. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 3A. With a transition frequency of 390MHz, it is suitable for high-frequency applications. The transistor offers a minimum DC current gain (hFE) of 300 at 100mA and 2V, and a maximum Vce(sat) of 120mV at 100mA and 1A, ensuring good conduction characteristics. The device dissipates a maximum power of 1.3W and operates at temperatures up to 150°C (TJ). The 2SC6094-TD-E is supplied in a TO-243AA (PCP) surface mount package, delivered on tape and reel. Its robust specifications make it a viable option for power management and signal processing in consumer electronics, industrial automation, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 120mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Frequency - Transition | 390MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.3 W |
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