2SC6017-TL-E
TRANS NPN 50V 10A TPFAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC6017-TL-E is an NPN bipolar junction transistor (BJT) designed for surface-mount applications. This component offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 10A. Featuring a transition frequency of 200MHz and a maximum power dissipation of 950mW, it is suitable for power switching and amplification tasks. The DC current gain (hFE) is a minimum of 200 at 1A and 2V. Saturation voltage (Vce(sat)) is specified at a maximum of 360mV at 250mA collector current and 5A collector current. The transistor is housed in a TO-252-3, DPAK (2 leads + tab), SC-63 package, also known as TP-FA, and is supplied in tape and reel packaging. This device finds application in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 360mV @ 250mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 950 mW |
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