2SC6017-E
TRANS NPN 50V 10A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
The onsemi 2SC6017-E is an NPN bipolar junction transistor (BJT) designed for robust power switching applications. This through-hole component features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 10A. With a transition frequency of 200MHz and a maximum power dissipation of 950mW, it is suitable for use in power supplies and industrial control systems. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 1A/2V and a saturation voltage (Vce(sat)) of 360mV at 250mA/5A. It operates within an ambient temperature range up to 150°C (TJ). The device is supplied in a TO-251-3 Short Leads, IPAK, TO-251AA package, commonly referred to as TP.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 360mV @ 250mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 950 mW |
Request a Quote
Clients Also Buy
MJE200STU
TRANS NPN 25V 5A TO126-3
MMBT2907-D87Z
TRANS PNP 40V 0.8A SOT23-3
SMMBTA42LT3G
TRANS NPN 300V 0.5A SOT23-3
