2SC5964-S-TD-E
TRANS NPN 50V 3A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2SC5964-S-TD-E is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current rating of 3A. With a transition frequency of 380MHz and a maximum power dissipation of 1.3W, it is well-suited for power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 200 at 100mA and 2V, and a Vce saturation of 290mV at 100mA and 2A. Packaged in a TO-243AA (PCP) surface mount configuration and supplied on tape and reel, the 2SC5964-S-TD-E is utilized in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 290mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 380MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1.3 W |
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