2SC5707-E
TRANS NPN 50V 8A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC5707-E is a high-current NPN Bipolar Junction Transistor (BJT) designed for robust performance in demanding applications. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 8A, making it suitable for power switching and amplification tasks. With a transition frequency of 330MHz and a maximum power dissipation of 1W, it provides efficient operation. The device features a low saturation voltage of 240mV at 3.5A collector current, minimizing power loss during switching. Its high DC current gain (hFE) of 200 at 500mA and 2V collector-emitter voltage ensures effective amplification. The 2SC5707-E is packaged in a TO-251-3 (IPAK) through-hole configuration, commonly utilized in industrial automation, power supply units, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 175mA, 3.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 330MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |