2SC5706-P-E
TRANS NPN 100V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2SC5706-P-E is an NPN bipolar junction transistor (BJT) designed for high-performance applications. This component features a collector-emitter breakdown voltage of 100V and a maximum collector current of 5A. With a transition frequency of 400MHz and a power dissipation of 800mW, it is suitable for demanding switching and amplification circuits. The DC current gain (hFE) is a minimum of 200 at 500mA and 2V, and the saturation voltage (Vce) is a maximum of 240mV at 100mA and 2A. The 2SC5706-P-E is housed in a TO-251-3 Short Leads, IPAK, TO-251AA (TP) package for through-hole mounting. This transistor is commonly utilized in power management, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 400MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 800 mW |
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