2SC5706-H
TRANS NPN 50V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
The onsemi NPN Bipolar Junction Transistor (BJT), part number 2SC5706-H, offers robust performance for demanding applications. This through-hole component features a collector current rating of 5A and a collector-emitter breakdown voltage of 50V. With a transition frequency of 400MHz and a maximum power dissipation of 800mW, it is suitable for power switching and amplification circuits. The minimum DC current gain (hFE) is specified at 200 at 500mA and 2V, with a saturation voltage (Vce Sat) of 240mV at 100mA and 2A. The operating temperature range extends to 150°C (TJ). This device is commonly utilized in industrial and automotive power management systems. The package type is TO-251-3 Short Leads, IPAK, also known as TO-251AA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 400MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |