2SC5706-E
TRANS NPN 50V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC5706-E is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 5A, making it suitable for power handling requirements. With a transition frequency of 400MHz and a maximum power dissipation of 800mW, it offers efficient performance in its class. The DC current gain (hFE) is a minimum of 200 at 500mA and 2V. It exhibits a Vce saturation of 240mV at 100mA and 2A. The transistor is housed in a TO-251-3 Short Leads, IPAK, TO-251AA (TP) package, facilitating through-hole mounting. Operating temperature range extends up to 150°C (TJ). This device finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 400MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |