2SC536NG-NPA-AT
TRANS NPN 50V 0.15A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor (BJT), part number 2SC536NG-NPA-AT. This through-hole component is housed in a TO-92 (TO-226) package and features a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. With a transition frequency of 200MHz and a maximum power dissipation of 500mW, it offers a minimum DC current gain (hFE) of 280 at 1mA, 6V. The saturation voltage (Vce) is a maximum of 300mV at 10mA, 100mA. This device is suitable for applications in consumer electronics and industrial control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 1mA, 6V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
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