2SC536NF-NPA-AT
TRANS NPN 50V 0.15A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SC536NF-NPA-AT is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 50V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 150mA. The minimum DC current gain (hFE) is specified at 160 at 1mA collector current and 6V Vce. Its transition frequency (fT) reaches 200MHz, making it suitable for moderate frequency circuits. The transistor is housed in a TO-92 (TO-226) package with formed leads, suitable for through-hole mounting. The maximum power dissipation is 500mW, and it can operate at junction temperatures up to 150°C. Typical applications include consumer electronics and industrial control systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1mA, 6V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
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