2SC4617T1G
TRANS NPN 50V 0.1A SC75 SOT416Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC4617T1G is an NPN bipolar junction transistor designed for high-frequency applications. This surface-mount device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100 mA. With a transition frequency of 180 MHz and a power dissipation of 125 mW, it is suitable for use in telecommunications, consumer electronics, and industrial control systems. The transistor exhibits a minimum DC current gain of 120 at 1mA and 6V, with a collector cutoff current of 500 nA. It is supplied in an SC-75, SOT-416 package on tape and reel. The Vce saturation voltage is 400mV at 5mA base current and 60mA collector current. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 60mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | SC-75, SOT-416 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 125 mW |
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