2SC4256
NPN SILICON TRANSISTORManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
Bipolar (BJT) Transistor NPN 1200 V 10 mA 6MHz 1.75 W Through Hole TO-220AB
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 200µA, 1mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 500µA, 5V |
| Frequency - Transition | 6MHz |
| Supplier Device Package | TO-220AB |
| Grade | - |
| Current - Collector (Ic) (Max) | 10 mA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 1.75 W |
| Qualification | - |
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