2SC4135T-E
TRANS NPN 100V 2A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC4135T-E is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 100 V, making it suitable for power switching and amplification tasks. With a transition frequency of 120 MHz and a power dissipation of 1 W, it offers efficient operation. The device exhibits a minimum DC current gain (hFE) of 200 at 100 mA and 5 V, with a Vce saturation of 400 mV at 100 mA and 1 A. The maximum collector cutoff current is rated at 100 nA (ICBO). Packaged in a TO-251-3 Short Leads (IPAK) configuration, this through-hole mounted transistor is commonly utilized in industrial automation, power management, and consumer electronics. Operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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