2SC4135S-TL-E
TRANS NPN 100V 2A TPFAManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number 2SC4135S-TL-E. This device offers a 100V collector-emitter breakdown voltage and a continuous collector current of 2A. Key electrical characteristics include a maximum power dissipation of 1W and a transition frequency of 120MHz. The DC current gain (hFE) is a minimum of 140 at 100mA collector current and 5V collector-emitter voltage. Vce(sat) is specified at a maximum of 400mV for 100mA base current and 1A collector current. Collector cutoff current (ICBO) is a maximum of 100nA. The device is housed in a TO-252-3, DPAK (SC-63) surface mount package, supplied on tape and reel. It is suitable for general-purpose amplification and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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