2SC4135S-E
TRANS NPN 100V 2A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC4135S-E is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a 100V collector-emitter breakdown voltage and a maximum collector current of 2A. It offers a transition frequency of 120MHz and a power dissipation of 1W. The minimum DC current gain (hFE) is 140 at 100mA and 5V, with a Vce saturation of 400mV at 100mA and 1A. The collector cutoff current (ICBO) is a maximum of 100nA. Operating at temperatures up to 150°C (TJ), this transistor is packaged in a TO-251-3 Short Leads, IPAK, or TO-251AA (TP) configuration. It is commonly utilized in consumer electronics, industrial control, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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