2SC4134S-E
TRANS NPN 100V 1A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC4134S-E is a NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This device features a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 1A. With a maximum power dissipation of 800mW, it is suitable for use in power supply circuits, voltage regulators, and audio amplifiers. The 2SC4134S-E offers a minimum DC current gain (hFE) of 140 at 100mA and 5V, and a transition frequency of 120MHz. Its saturation voltage (Vce Sat) is a maximum of 400mV at 40mA base current and 400mA collector current. The component is provided in a TO-251-3 short leads, IPAK (TO-251AA) package, facilitating through-hole mounting. Operating temperature ranges up to 150°C. Commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 40mA, 400mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 800 mW |
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