2SC4081RT1G
TRANS NPN 50V 0.1A SC70-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC4081RT1G is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. With a maximum power dissipation of 200mW at an operating temperature of 150°C, it is suitable for demanding environments. The transistor exhibits a minimum DC current gain (hFE) of 180 at 2mA collector current and 6V collector-emitter voltage. Its saturation voltage is specified at a maximum of 500mV at 10mA base current and 100mA collector current. The 2SC4081RT1G is provided in a compact SC-70-3 (SOT323) surface-mount package, supplied on tape and reel. This device finds application in various industries including consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 6V |
| Frequency - Transition | - |
| Supplier Device Package | SC-70-3 (SOT323) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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