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2SC4027T-H

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2SC4027T-H

TRANS NPN 160V 1.5A TP

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi NPN Bipolar Junction Transistor (BJT), part number 2SC4027T-H. This component is rated for a maximum collector current of 1.5 A and a collector-emitter breakdown voltage of 160 V. It features a transition frequency of 120 MHz and a maximum power dissipation of 1 W. The DC current gain (hFE) is a minimum of 200 at 100 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 450 mV with a base current of 50 mA and a collector current of 500 mA. The transistor is housed in a TO-251-3 Short Leads, IPAK, TO-251AA package, also known as TP, suitable for through-hole mounting. The maximum operating junction temperature is 150°C. This device finds application in general-purpose amplification and switching circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic450mV @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 5V
Frequency - Transition120MHz
Supplier Device PackageTP
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max1 W

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