2SC4027T-E
TRANS NPN 160V 1.5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC4027T-E is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 160V and a continuous collector current capability of 1.5A. With a transition frequency of 120MHz and a maximum power dissipation of 1W, it is suitable for use in power supply circuits, audio amplifiers, and general switching operations. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 100mA and 5V, and a Vce saturation of 450mV at 50mA and 500mA. The transistor operates reliably at junction temperatures up to 150°C. Packaged in a TO-251-3 short leads (IPAK) configuration, the 2SC4027T-E is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 1 W |
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