2SC3649S-TD-H
TRANS NPN 160V 1.5A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC3649S-TD-H is an NPN Bipolar Junction Transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 160V and a maximum continuous collector current of 1.5A. It features a transition frequency of 120MHz and a maximum power dissipation of 500mW. Key specifications include a minimum DC current gain (hFE) of 140 at 100mA and 5V, and a Vce saturation voltage of 450mV at 50mA and 500mA. The collector cutoff current (ICBO) is rated at 1µA. The device is supplied in a PCP (TO-243AA) package, presented on a tape and reel for automated assembly. This transistor is suitable for use in various electronic circuits, including power supply switching and general-purpose amplification, finding application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 500 mW |
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