2SC3646T-P-TD-E
TRANS NPN 100V 1A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number 2SC3646T-P-TD-E. This surface mount device offers a Collector-Emitter Breakdown Voltage (Vce) of 100V and a continuous Collector Current (Ic) of up to 1A, suitable for general-purpose amplification and switching applications. Featuring a transition frequency (fT) of 120MHz and a maximum power dissipation of 500mW, this transistor is designed for efficient operation. The minimum DC current gain (hFE) is rated at 200 at 100mA and 5V. The device is supplied in a PCP package (TO-243AA) on tape and reel. Common applications include consumer electronics, industrial control systems, and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 40mA, 400mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 500 mW |
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