2SC3646S-P-TD-E
TRANS NPN 100V 1AManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number 2SC3646S-P-TD-E. This surface-mount device offers a collector-emitter breakdown voltage of 100V and a continuous collector current of 1A. It features a transition frequency of 120MHz and a maximum power dissipation of 500mW. The DC current gain (hFE) is a minimum of 140 at 100mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 400mV at 40mA base current and 400mA collector current. The transistor is supplied in the TO-243AA package, specifically the PCP supplier device package, on tape and reel. Applications include general-purpose switching and amplification in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 40mA, 400mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 500 mW |
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