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2SC3503FSTU

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2SC3503FSTU

TRANS NPN 300V 0.1A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi 2SC3503FSTU is an NPN bipolar junction transistor (BJT) designed for power switching and linear amplification applications. This component features a 300V collector-emitter breakdown voltage (Vce(max)) and a continuous collector current (Ic) capability of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 160 at 10mA collector current and 10V collector-emitter voltage, with a transition frequency (fT) of 150MHz. Power dissipation is rated at 7W. The TO-126-3 package with through-hole mounting is suitable for various industrial and consumer electronics, including power supplies and audio amplifiers. Operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 2mA, 20mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 10mA, 10V
Frequency - Transition150MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max7 W

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