2SC3503ESTU
TRANS NPN 300V 0.1A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC3503ESTU is an NPN bipolar junction transistor designed for high voltage applications. This component features a maximum collector-emitter breakdown voltage of 300V and a continuous collector current rating of 100mA. Its transition frequency is specified at 150MHz, with a minimum DC current gain (hFE) of 100 at 10mA collector current and 10V Vce. The transistor exhibits a Vce(sat) of 600mV at 2mA base current and 20mA collector current. With a maximum power dissipation of 7W and an operating junction temperature range of -55°C to 150°C, it is suitable for use in power supply circuits, switching applications, and general-purpose amplification in industrial and consumer electronics. The 2SC3503ESTU is supplied in a TO-126-3 (TO-225AA) through-hole package, delivered in tubes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 7 W |
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