2SC3503DSTU
TRANS NPN 300V 0.1A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2SC3503DSTU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 100mA. The transition frequency is specified at 150MHz, and it offers a maximum power dissipation of 7W. The specified DC current gain (hFE) is a minimum of 60 at 10mA collector current and 10V Vce. The saturation voltage (Vce(sat)) is a maximum of 600mV at 2mA base current and 20mA collector current. The transistor is housed in a TO-126-3 (TO-225AA) package suitable for through-hole mounting and is supplied in tubes. Typical applications include power supply circuits and general switching duties across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 10V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 7 W |
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