2SC3332T-AA
TRANS NPN 160V 0.7A 3NPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number 2SC3332T-AA. This device offers a maximum collector current of 700 mA and a collector-emitter breakdown voltage of 160 V. It features a transition frequency of 120 MHz and a maximum power dissipation of 700 mW. The DC current gain (hFE) is a minimum of 100 at 100 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at 400 mV maximum for an operating point of 25 mA base current and 250 mA collector current. The transistor is housed in a 3-NP package (TO-226AA) suitable for through-hole mounting, with formed leads for ease of assembly. Typical applications include general-purpose amplification and switching in industrial and consumer electronics. Operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 25mA, 250mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | 3-NP |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 700 mW |
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