2SC2909S
SMALL SIGNAL BIPOLAR TRANSTR NPNManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SC2909S is an NPN bipolar junction transistor (BJT) designed for small-signal applications. This through-hole component features a collector-emitter breakdown voltage of 160 V and a maximum collector current of 70 mA. With a transition frequency of 150 MHz and a power dissipation of 600 mW, it offers efficient amplification. The device exhibits a minimum DC current gain (hFE) of 140 at 10 mA and 5 V. Collector cutoff current is a maximum of 100 nA (ICBO). Vce saturation is specified at 300 mV maximum for an Ib of 3 mA and Ic of 30 mA. The 2SC2909S is packaged in a 3-NP (TO-226-3, TO-92-3) configuration and is suitable for use in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 3mA, 30mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 10mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | 3-NP |
| Grade | - |
| Current - Collector (Ic) (Max) | 70 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 600 mW |
| Qualification | - |
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