2SC2812N6-CPA-TB-E
TRANS NPN 50V 0.15A 3CPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SC2812N6-CPA-TB-E is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 150mA. It features a transition frequency of 100MHz and a maximum power dissipation of 200mW. The DC current gain (hFE) is a minimum of 200 at 1mA collector current and 6V collector-emitter voltage. Other key parameters include a collector cutoff current of 100nA (ICBO) and a Vce(sat) of 500mV at 5mA base current and 50mA collector current. The device is supplied in a 3-CP package (TO-236-3, SC-59, SOT-23-3) and is available on tape and reel. This transistor is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 6V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | 3-CP |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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