2SC2812-5-TB-E
TRANSISTORManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi NPN Bipolar Junction Transistor (BJT) for general-purpose applications. This surface-mount device, the 2SC2812-5-TB-E, offers a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 150mA. It features a transition frequency of 100MHz and a maximum power dissipation of 200mW. The transistor exhibits a minimum DC current gain (hFE) of 135 at 1mA and 6V, with a saturation voltage (Vce(sat)) of 500mV at 5mA/50mA. Supplied in a 3-CP package (TO-236-3, SC-59, SOT-23-3) and delivered in bulk, this component is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 1mA, 6V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | 3-CP |
| Grade | - |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Qualification | - |
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