2SB817C
PNP SILICON TRANSISTORManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB817C is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-3P-3 package. This component features a collector-emitter breakdown voltage of up to 140 V and a maximum continuous collector current of 12 A. With a transition frequency of 10 MHz and a maximum power dissipation of 2.5 W, it offers a minimum DC current gain (hFE) of 100 at 1 A collector current and 5 V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 2 V for a collector current of 5 A and a base current of 500 mA. The collector cutoff current (ICBO) is limited to 100 µA. This device is suitable for applications requiring high current handling and voltage, commonly found in power supply regulation, audio amplifiers, and general-purpose switching applications. Its operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | TO-3P-3 |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 2.5 W |
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