2SB815-7-TB-E
TRANS PNP 15V 0.7A 3CPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, part number 2SB815-7-TB-E. This device features a 15 V collector-emitter breakdown voltage and a maximum collector current of 700 mA. With a transition frequency of 250 MHz and a power dissipation of 200 mW, it is suitable for applications requiring moderate switching speeds and power handling. The minimum DC current gain (hFE) is 300 at 50 mA and 2 V, and the Vce saturation is a maximum of 80 mV at 10 mA collector current. Supplied in a 3-CP (TO-236-3, SC-59, SOT-23-3) package on tape and reel, this transistor is commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 125°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 50mA, 2V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | 3-CP |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 200 mW |
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