2SB815-6-TB-E
TRANS PNP 15V 0.7A 3CPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB815-6-TB-E is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications. This device features a collector-emitter breakdown voltage of 15V and a continuous collector current capability of 700mA. With a transition frequency of 250MHz and a minimum DC current gain (hFE) of 200 at 50mA and 2V, it is suitable for various electronic circuits. The transistor operates with a maximum power dissipation of 200mW and a junction temperature up to 125°C. It is supplied in a TO-236-3, SC-59, or SOT-23-3 package (3-CP) for surface mounting and is delivered on tape and reel. Typical applications include consumer electronics, industrial control systems, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 125°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 50mA, 2V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | 3-CP |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 200 mW |