onsemi 2SB633E is a high-performance bipolar junction transistor (BJT) designed for demanding applications. This NPN transistor offers a continuous collector current (Ic) of 6 Amperes and a collector-emitter voltage (Vce) rating of 85 Volts. Engineered for robust power handling and efficient amplification, the 2SB633E is suitable for use in power supply circuits, audio amplifiers, and general-purpose switching applications across industrial and consumer electronics sectors. Packaged in Bulk for high-volume integration.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk