2SB1302T-TD-E
TRANS PNP 20V 5A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1302T-TD-E is a PNP bipolar junction transistor (BJT) designed for demanding applications. This device features a 20V collector-emitter breakdown voltage and a maximum collector current of 5A, making it suitable for power handling in various electronic circuits. The transition frequency of 320MHz indicates its capability for high-speed switching operations. With a maximum power dissipation of 1.3W and an operating junction temperature up to 150°C, it offers robust performance. The transistor type is PNP, and it is supplied in a Tape & Reel package with the Supplier Device Package being PCP (TO-243AA). Key parameters include a minimum DC current gain (hFE) of 100 at 500mA and 2V, a collector cutoff current of 500nA, and a Vce(sat) of 500mV at 60mA and 3A. This component finds application in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Frequency - Transition | 320MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1.3 W |