2SB1302S-TD-E
TRANS PNP 20V 5A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1302S-TD-E is a PNP bipolar junction transistor designed for robust performance in demanding electronic applications. This component features a Collector Current (Ic) of up to 5A and a Collector-Emitter Breakdown Voltage (Vce(max)) of 20V. With a significant DC Current Gain (hFE) of 100 minimum at 500mA and 2V, it ensures efficient amplification. The transition frequency (fT) reaches 320MHz, making it suitable for high-speed switching and signal processing. The device dissipates a maximum power of 1.3W and operates reliably up to 150°C (TJ). Packaged in a TO-243AA (PCP) surface mount configuration and supplied on tape and reel, the 2SB1302S-TD-E is commonly utilized in power management circuits, automotive systems, and industrial control equipment requiring efficient current handling and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Frequency - Transition | 320MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1.3 W |
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